| PART |
Description |
Maker |
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| J650-1 J650-10FS |
6.6A Iout, 2.5kV Vrrm General Purpose Silicon Rectifier
2.0A Iout, 5.0kV Vrrm Fast Recovery Rectifier
|
RPM Micro
|
| CQ92MT CQ92BT |
TRIAC|200V V(DRM)|800MA I(T)RMS|TO-92
TRIAC|600V V(DRM)|800MA I(T)RMS|TO-92 可控硅| 600V的五（DRM）的| 800mA的我（T）的有效值|92
|
Orion Fans
|
| BTA04-800S BTA04-200S BTB04-800S |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|800V V(DRM)|4A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 4A条口（T）的有效值|20
|
STMicroelectronics N.V.
|
| FG2000DX40 |
THYRISTOR|GTO|2KV V(DRM)|TO-200AE 晶闸管| GTO的| 2kV的五（DRM）的|00AE
|
Fairchild Semiconductor, Corp.
|
| FG450BL32 |
THYRISTOR|GTO|1.6KV V(DRM)|TO-200AC 晶闸管| GTO的| 1.6KV五（DRM）的|00AC
|
Integrated Silicon Solution, Inc.
|
| TRIAC210-40 |
TRIAC|400V V(DRM)|25A I(T)RMS|CHIP 可控硅| 400V五（DRM）的| 25A条口（T）的有效值|芯片
|
TE Connectivity, Ltd.
|
| TPDV225 TPDV125 TPDV425 |
TRIAC|200V V(DRM)|25A I(T)RMS|TO-218 可控硅| 200伏五（DRM）的| 25A条口（T）的有效值|18
TRIAC|400V V(DRM)|25A I(T)RMS|TO-218
|
Delta Electronics, Inc.
|
| CDL71240 CDL20840 CDL21440 CDL70140 CDL70240 |
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|1.2KV V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED POSITIVE DOUBLER|800V V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED POSITIVE DOUBLER|1.4KV V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|100V V(DRM)|MODULE-S PHOTOTHYRISTOR |图片半控负倍增| 100V的五（DRM）的|模块
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|200V V(DRM)|MODULE-S PHOTOTHYRISTOR |图片半控负倍增| 200伏五（DRM）的|模块
|
Atmel, Corp.
|
| CQ89N CQ89D CQ89M CQ89B |
2.0 AMP TRIAC 400 THRU 800 VOLTS
TRIAC|200V V(DRM)|1A I(T)RMS|SOT-89 可控硅| 200伏五（DRM）的| 1A条口T）的有效值|采用SOT - 89
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Teridian Semiconductor, Corp.
|
| 2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
|
